onsemi MMBTA14

Name: onsemi MMBTA14
Brand: onsemi
SKU: MMBTA14

Bipolar (bjt) Single Transistor, Darlington, NPN, 30 V, 125 Mhz, 350 Mw, 1.2 A, 20000 Rohs Compliant: Yes

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor	SKU		Min	Pkg
Component Stockers USA	MMBTA14	15,212			0.050	0.050	0.030	0.030	0.050	3h
Win Source	WS-MMBTA14	129,600	2035						0.020	14h
Worldway Electronics	MMBTA14	24,623	7	Tape & Reel		0.017	0.017	0.016	0.016	12h
Fly-Wing Technology	MMBTA14	128,200			0.017	0.014	0.013	0.012	0.012	1d
Lixinc	MMBTA14	13,208			0.040	0.040	0.040	0.040	0.040	4d

数据表和文档

下载 onsemi MMBTA14 的数据表和制造商文档。

IHS

Datasheet3 页0 年前

Datasheet0 页0 年前

TME

onsemi

element14 APAC

Fairchild Semiconductor

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onsemiMMBTA14

Diodes Inc.MMBTA14-7-F

Price @ 1000

$ 0.063

Stock

348,814

3,113,056

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

Polarity

NPN

Collector Emitter Breakdown Voltage

30 V

Max Collector Current

300 mA

Transition Frequency

125 MHz

Collector Emitter Saturation Voltage

1.5 V

hFE Min

10000

20000

Power Dissipation

350 mW

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1994-01-01

Lifecycle StatusObsolete (Last Updated: 4 days ago)

LTB Date2019-01-26

LTD Date2019-07-26

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

描述

由其分销商提供的 onsemi MMBTA14 的描述。

BIPOLAR (BJT) SINGLE TRANSISTOR, DARLINGTON, NPN, 30 V, 125 MHZ, 350 MW, 1.2 A, 20000 ROHS COMPLIANT: YES

Newark

MMBTA14 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23

Future Electronics

Small Signal Bipolar Transistor, 1.2A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

IHS

Tape & Reel (TR) Surface Mount NPN - Darlington Single Bipolar (BJT) Transistor 20000 @ 100mA 5V 1.2A 350mW 125MHz

Fly-Wing Technology

Trans Darlington NPN 30V 1.2A 3-Pin SOT-23 T/R

Avnet

NPN Darlington Transistor This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.

Fairchild Semiconductor

TRANSISTOR NPN DARL 0.3A 30V SOT23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Transition Frequency Typ ft:125MHz; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:20000; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Collector Emitter Voltage Vces:1.5V; Current Ic Continuous a Max:100mA; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; Package / Case:SOT-23; Power Dissipation Pd:350mW; Termination Type:SMD; Transistor Type:Darlington

element14 APAC