onsemi MMBTA13

Name: onsemi MMBTA13
Brand: onsemi
SKU: MMBTA13

MMBTA13 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23

Obsolete

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价格与库存

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Distributor	SKU		Min	Pkg
Win Source	WS-MMBTA13	99,999	740					0.068	0.045	11h
Worldway Electronics	MMBTA13	20,578	7	Tape & Reel		0.030	0.029	0.028	0.028	9h
Chipsmall Limited	MMBTA13	300,000	1		0.062	0.042	0.025	0.021	0.021	6h
ZTZ Technology Limited	MMBTA13	20,754			0.045	0.041	0.038	0.031	0.031	1d
Bettlink	MMBTA13	2,900			0.048	0.035	0.031	0.029	0.026	3d

数据表和文档

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TME

Datasheet4 页21 年前

IHS

onsemi

Farnell

Fairchild Semiconductor

CAD 模型

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备用零件

此零件

备用零件

onsemiMMBTA13

onsemiMMBTA13LT1G

Price @ 1000

$ 0.042

Stock

505,112

17,464,131

Authorized Distributors

Mount

Surface Mount

Case/Package

SOT-23

SOT-23-3

Polarity

NPN

Collector Emitter Breakdown Voltage

30 V

Max Collector Current

300 mA

Transition Frequency

125 MHz

Collector Emitter Saturation Voltage

1.5 V

hFE Min

5000

10000

Power Dissipation

350 mW

225 mW

供应链

Country of OriginPhilippines

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.21.00.95

Introduction Date1989-01-01

Lifecycle StatusObsolete (Last Updated: 4 days ago)

LTB Date2019-01-26

LTD Date2019-07-26

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 4 days ago)

描述

由其分销商提供的 onsemi MMBTA13 的描述。

MMBTA13 Series 30 V CE Breakdown 1.2 A NPN Darlington Transistor - SOT-23

Future Electronics

Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon

Rebound Electronics

Trans Darlington NPN 30V 1.2A 3-Pin SOT-23 T/R

Avnet

TRANSISTOR, DARLINGTON SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transition Frequency ft: -; Power Dissipation Pd: 350mW; DC Collector Current: 1.2A; DC Current Gain hFE: 5000hFE; Transistor Ca

Farnell

Small Signal Bipolar Transistor; Transistor Polarity:NPN; Power Dissipation, Pd:0.35W; DC Current Gain Min (hfe):10000; Package/Case:SOT-323; C-E Breakdown Voltage:30V; DC Collector Current:1.2A; Leaded Process Compatible:Yes ;RoHS Compliant: Yes

Newark

DARLINGTON TRANSISTOR, SOT-23; Transistor Polarity:NPN; Collector Emitter Voltage V(br)ceo:30V; Power Dissipation Pd:350mW; DC Collector Current:1.2A; DC Current Gain hFE:10000; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Av Current Ic:1.2A; Collector Emitter Voltage Vces:1.5V; Continuous Collector Current Ic Max:300mA; Current Ic Continuous a Max:1.2A; Current Ic hFE:10A; Device Marking:MMBTA13; External Depth:2.5mm; External Length / Height:1.12mm; External Width:3.05mm; Gain Bandwidth ft Min:125MHz; Gain Bandwidth ft Typ:125MHz; Hfe Min:10000; No. of Transistors:1; Package / Case:SOT-23; Power Dissipation Pd:350mW; Power Dissipation Ptot Max:350mW; SMD Marking:1M; Termination Type:SMD; Transistor Type:Darlington; Voltage Vcbo:30V

element14 APAC