备用零件
此零件
备用零件
Price @ 1000
$ 0.062
$ 0.065
Stock
5,502,278
6,519,991
Authorized Distributors
6
6
Mount
Surface Mount
Surface Mount
Case/Package
SOT-23
SOT-23
Polarity
NPN
NPN
Collector Emitter Breakdown Voltage
30 V
30 V
Max Collector Current
1.2 A
500 mA
Transition Frequency
220 MHz
220 MHz
Collector Emitter Saturation Voltage
1 V
1 V
hFE Min
20000
20000
Power Dissipation
350 mW
250 mW
供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.21.00.95
Introduction Date1994-01-01
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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描述
由其分销商提供的 onsemi BCV27 的描述。
BCV Series NPN 350 mW 30 V 1.2 A SMT Darlington Transistor - SOT-23-3
Bipolar Transistors (BJT); BCV27; ON SEMICONDUCTOR; NPN; 3; 30 V; 1.2 A
Small Signal Bipolar Transistor, 0.3A I(C), 30V V(BR)CEO, 1-Element, NPN, Silicon
Trans Darlington NPN 30V 1.2A 350mW 3-Pin SOT-23 T/R / TRANS NPN DARL 30V 1.2A SOT23
This device is designed for applications requiring extremely high current gain at collector currents to 1.0 A. Sourced from Process 05.
TRANSISTOR, NPN SOT-23; Transistor Polarity: NPN; Collector Emitter Voltage V(br)ceo: 30V; Transistor Case Style: SOT-23; No. of Pins: 3Pins; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2018); Continuous Collector Current Ic
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Collector Base Voltage (VCBO)40 V
Collector Emitter Breakdown Voltage30 V
Collector Emitter Saturation Voltage1 V
Collector Emitter Voltage (VCEO)30 V
Current Rating1.2 A
Element ConfigurationSingle
Emitter Base Voltage (VEBO)10 V
Gain Bandwidth Product220 MHz
hFE Min20000
Max Breakdown Voltage30 V
Max Collector Current1.2 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation250 mW
Min Operating Temperature-55 °C
Number of Elements1
PackagingCut Tape
PolarityNPN
Power Dissipation350 mW
Schedule B8541210080
Transition Frequency220 MHz
Voltage Rating (DC)30 V
Dimensions
Height1.11 mm
Length2.92 mm
Width1.3 mm