供应链
Country of OriginMalaysia
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-03-24
Lifecycle StatusProduction (Last Updated: 3 weeks ago)
LTB Date2016-12-01
LTD Date2017-06-01
相关零件
InfineonIPB90N06S404ATMA2
MOSFET N-CH 60V 90A D2PAK / N-Channel 60 V 90A (Tc) 150W (Tc) Surface Mount PG-TO263-3
InfineonIRFS7762TRLPBF
MOSFET N-CH 75V 85A D2PAK / N-Channel 75 V 85A (Tc) 140W (Tc) Surface Mount PG-TO263-3
Diodes Inc.DMTH6004SCTB-13
Mosfet, N-Ch, 60V, 100A, To-263Ab Rohs Compliant: Yes |Diodes Inc. DMTH6004SCTB-13
onsemiFDB14AN06LA0-F085
MOSFET N-CH 60V 67A D2PAK / Trans MOSFET N-CH 60V 10A Automotive 3-Pin(2+Tab) D2PAK T/R
描述
由其分销商提供的 Infineon IPB80N06S407ATMA2 的描述。
60V, N-Ch, 7.1 mΩ max, Automotive MOSFET, D2PAK, OptiMOS™-T2, PG-TO263-3, RoHS
Infineon SCT
Trans MOSFET N-CH 60V 80A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK T/R
Power Field-Effect Transistor, 80A I(D), 60V, 0.0071ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB
Summary of Features: N-channel - Enhancement mode; AEC qualified; MSL1 up to 260C peak reflow; 175C operating temperature; Green Product (RoHS compliant); 100% Avalanche tested | Benefits: world's lowest RDS at 60V (on); highest current capability; lowest switching and conduction power losses for highest thermal efficiency; robust packages with superior quality and reliability; Optimized total gate charge enables smaller driver output stages | Target Applications: Valves control; Solenoids control; Lighting; Single-ended motors
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Terminals2
Weight1.946308 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Resistance7.1 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time5 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance4.5 nF
Max Dual Supply Voltage60 V
Max Operating Temperature175 °C
Max Power Dissipation79 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
On-State Resistance7.1 mΩ
Package Quantity1000
PackagingTape & Reel
Power Dissipation107 W
Rds On Max7.1 mΩ
Rise Time3 ns
Schedule B8541290080
Turn-Off Delay Time23 ns
Turn-On Delay Time15 ns
Dimensions
Height4.4 mm
Length10 mm
Width9.25 mm