onsemi FQP4N80

Name: onsemi FQP4N80
Brand: onsemi
SKU: FQP4N80

Power Mosfet, N-channel, Qfet®, 800 V, 3.9 A, 3.6 Ω, TO-220

$ 0.913

EOL

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价格与库存

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Distributor	SKU		Min	Pkg
Rochester Electronics	FQP4N80	230					1.100	0.913	0.814	10m
Farnell	FQP4N80	0	1		1.253*	1.253*	0.695*	0.422*	0.422*	1d
Component Stockers USA	FQP4N80	1,174			0.960	0.960	0.910	0.820	0.820	14h
Win Source	WS-FQP4N80	2,841	35				1.271	1.033	1.033	1h
Worldway Electronics	FQP4N80	11,804	7	Tube		0.259	0.251	0.237	0.237	1d

数据表和文档

下载 onsemi FQP4N80 的数据表和制造商文档。

IHS

Datasheet8 页12 年前

Datasheet0 页0 年前

Future Electronics

onsemi

Fairchild Semiconductor

iiiC

库存历史记录

3 个月趋势:

-1.46%

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-11-10

Lifecycle StatusEOL (Last Updated: 3 days ago)

Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)

描述

由其分销商提供的 onsemi FQP4N80 的描述。

Power MOSFET, N-Channel, QFET®, 800 V, 3.9 A, 3.6 Ω, TO-220

onsemi

Transistor,mosfet,n-Channel,800V V(Br)Dss,3.9A I(D),to-220 Rohs Compliant: Yes |Onsemi FQP4N80

Newark

Trans MOSFET N-CH 800V 3.9A 3-Pin(3+Tab) TO-220AB Rail

Avnet

Power Field-Effect Transistor, 3.9A I(D), 800V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.9A; Drain Source Voltage Vds: 800V; On Resistance Rds(on): 3.6ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 13

Farnell

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor