Infineon IRFB52N15DPBF

Name: Infineon IRFB52N15DPBF
Brand: Infineon
SKU: IRFB52N15DPBF

Mosfet, Power; N-ch; Vdss 150V; Rds(on) 32MILLIOHMS; Id 51A; TO-220AB; Pd 230W; -55DEG

$ 1.264

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价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRFB52N15DPBF	616	50				1.107	1.057	1.057	2d
Newark	2	IRFB52N15DPBF	4,678	1		1.090	1.090	1.090	1.090	1.090
Arrow Electronics	2	IRFB52N15DPBF	1,774	1		1.199	1.199	1.199	1.199	1.199
Future Electronics	2	IRFB52N15DPBF	850	50	Tube			1.370	1.330	1.300
Rochester Electronics		IRFB52N15DPBF	17,041					1.260	1.130	1.060	23h

数据表和文档

下载 Infineon IRFB52N15DPBF 的数据表和制造商文档。

Newark

Datasheet11 页15 年前

Datasheet12 页15 年前

Datasheet11 页23 年前

IHS

iiiC

RS (Formerly Allied Electronics)

Jameco

库存历史记录

3 个月趋势:

+24.16%

CAD 模型

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EE Concierge	符号封装

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2001-12-12

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRFB52N15DPBF 的描述。

MOSFET, Power;N-Ch;VDSS 150V;RDS(ON) 32Milliohms;ID 51A;TO-220AB;PD 230W;-55deg

RS (Formerly Allied Electronics)

Transistor MOSFET Negative Channel 150 Volt 51A 3-Pin(3+Tab) TO-220AB

Jameco

Single N-Channel 150 V 32 mOhm 89 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

150V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 150 V, 60 A, 0.032 ohm, TO-220AB, Through Hole

Avnet

Trans MOSFET N-CH 150V 51A 3-Pin(3+Tab) TO-220AB

Verical

Power Field-Effect Transistor, 60A I(D), 150V, 0.032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

N Channel Mosfet, 150V, 60A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:150V; Continuous Drain Current Id:60A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Msl:- Rohs Compliant: Yes |Infineon Technologies IRFB52N15DPBF.

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 150V, 60A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:150V; On Resistance Rds(on):32mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:320W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:60A; Junction to Case Thermal Resistance A:0.47°C/W; On State resistance @ Vgs = 10V:32ohm; Package / Case:TO-220AB; Power Dissipation Pd:320W; Power Dissipation Pd:320W; Pulse Current Idm:240A; Termination Type:Through Hole; Voltage Vds Typ:150V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

element14 APAC