供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-12-07
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
描述
由其分销商提供的 onsemi FQP3P20 的描述。
Power MOSFET, P-Channel, QFET®, -200 V, -2.8 A, 2.7 Ω, TO-220
Trans MOSFET P-CH 200V 2.8A 3-Pin(3+Tab) TO-220AB Rail
P-Channel 200 V 2.7 Ohm Flange Mount Mosfet - TO-220
Power Field-Effect Transistor, 2.8A I(D), 200V, 2.7ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, P-CHANNEL, -200V, -2.8A, TO220-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.8A; Drain Source Voltage Vds: -200V; On Resistance Rds(on): 2.06ohm; Rds(on) Tes; Available until stocks are exhausted
This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)2.8 A
Current28 A
Current Rating-2.8 A
Drain to Source Breakdown Voltage-200 V
Drain to Source Resistance2.7 Ω
Drain to Source Voltage (Vdss)-200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance250 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation52 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation52 W
Rds On Max2.7 Ω
Resistance2.7 Ω
Rise Time35 ns
Schedule B8541290080
Threshold Voltage-5 V
Turn-Off Delay Time12 ns
Turn-On Delay Time8.5 ns
Voltage200 V
Voltage Rating (DC)-200 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.7 mm