onsemi IRL610A
$ 0.186
Obsolete
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1997-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
描述
由其分销商提供的 onsemi IRL610A 的描述。
Tube Through Hole N-Channel Single Mosfet Transistor 3.3A Tc 3.3A 33W 6ns
Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFETs 200V N-Channel a-FET Logic Level
MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.3A; On-Resistance, Rds(on):1.5ohm; Rds(on) Test Voltage, Vgs:5V; Package/Case:TO-220; Leaded Process Compatible:Yes RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)3.3 A
Current Rating3.3 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.5 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance240 pF
Max Operating Temperature150 °C
Max Power Dissipation33 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation33 W
Rds On Max1.5 Ω
Rise Time9 ns
Turn-Off Delay Time20 ns
Voltage Rating (DC)200 V