供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2008-06-06
LTD Date2008-12-06
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
onsemiFQP10N20CTSTU
Power Field-Effect Transistor, 9.5A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
描述
由其分销商提供的 onsemi FQP7N20 的描述。
Power MOSFET, N-Channel, QFET®, 200 V, 6.6 A, 0.69 Ω, TO-220
N-Channel 200 V 6.6 A 690 mOhm Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 200V 6.6A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 200V 6.6A TO-220
Power Field-Effect Transistor, 6.6A I(D), 200V, 0.69ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)6.6 A
Current Rating6.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance690 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time35 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance400 pF
Max Operating Temperature150 °C
Max Power Dissipation63 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation63 W
Rds On Max690 mΩ
Rise Time65 ns
Turn-Off Delay Time15 ns
Voltage Rating (DC)200 V