供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date1999-01-01
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2008-06-06
LTD Date2008-12-06
描述
由其分销商提供的 onsemi FQP4N20 的描述。
200V N-Channel MOSFET | MOSFET N-CH 200V 3.6A TO-220
Power Field-Effect Transistor, 3.6A I(D), 200V, 1.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 3.6A; Drain Source Voltage Vds: 200V; On Resistance Rds(on): 1.12ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: -; Power Dissipation Pd: 4
MOSFET, N TO-220MOSFET, N TO-220; Transistor type:MOSFET; Transistor polarity:N; Voltage, Vds max:200V; Case style:TO-220; Current, Id cont:3.6A; Current, Idm pulse:14.4A; Power, Pd:45W; Resistance, Rds on:1.5R; Capacitance, Ciss RoHS Compliant: Yes
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Terminals3
Technical
Continuous Drain Current (ID)3.6 A
Current Rating3.6 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance1.4 Ω
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time25 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance220 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation45 W
Rds On Max1.4 Ω
Rise Time50 ns
Turn-Off Delay Time7 ns
Voltage Rating (DC)200 V