onsemi FQP2N60C

Name: onsemi FQP2N60C
Brand: onsemi
SKU: FQP2N60C

Power Mosfet, N-channel, Qfet®, 600 V, 2 A, 4.7 Ω, TO-220

Obsolete

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Distributor	SKU		Min	Pkg
Win Source	WS-FQP2N60C	1,760	190					0.207	0.179	20h
Worldway Electronics	FQP2N60C	20,811	7	Tube		0.061	0.059	0.056	0.056	19h
Aztech	FQP2N60C	4,225			0.510	0.510	0.510	0.510	0.510	16h
Chipsmall Limited	FQP2N60C	200,000	1		0.205	0.137	0.082	0.068	0.068	2h
Anlinkda	FQP2N60C	47,785			1.058	0.948	0.814	0.793	0.762	18h

数据表和文档

下载 onsemi FQP2N60C 的数据表和制造商文档。

IHS

Datasheet10 页12 年前

Newark

Future Electronics

onsemi

element14 APAC

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onsemiFQP2N60C

onsemiFQP2N60

Price @ 1000

$ 1.074

Stock

412,320

1,493,309

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220-3

TO-220

Drain to Source Voltage (Vdss)

600 V

Continuous Drain Current (ID)

2 A

2.4 A

Threshold Voltage

4 V

Rds On Max

4.7 Ω

Gate to Source Voltage (Vgs)

30 V

Power Dissipation

54 W

64 W

Input Capacitance

235 pF

350 pF

供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2003-10-02

Lifecycle StatusObsolete (Last Updated: 5 days ago)

Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)

描述

由其分销商提供的 onsemi FQP2N60C 的描述。

Power MOSFET, N-Channel, QFET®, 600 V, 2 A, 4.7 Ω, TO-220

onsemi

Trans MOSFET N-CH 600V 2A 3-Pin(3+Tab) TO-220 Tube / MOSFET N-CH 600V 2A TO-220

Win Source

Single N-Channel 600 V 4.7 Ohm 12 nC 54 W DMOS Mosfet - TO-220-3

Future Electronics

2.0 A, 600 V N-CHANNEL MOSFET Power Field-Effect Transistor, 2A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:1.35A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:54W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2A; Current Temperature:25°C; External Length / Height:4.83mm; External Width:10.67mm; Full Power Rating Temperature:25°C; No. of Transistors:1; On State Resistance Max:4.7ohm; Package / Case:TO-220; Power Dissipation Pd:54W; Power Dissipation Pd:54W; Pulse Current Idm:8A; Termination Type:Through Hole; Voltage Vds Typ:600V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V

element14 APAC