Vishay IRF820PBF

Name: Vishay IRF820PBF
Brand: Vishay
SKU: IRF820PBF

Single N-Channel 500 V 3 Ohms Flange Mount Power Mosfet - TO-220AB

$ 0.483

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	63J7404	426	1		2.170	1.440	1.030	0.793	0.793	2d
Newark		IRF820PBF	426	1		2.170	1.440	1.030	0.793	0.744
Arrow Electronics		IRF820PBF	250	1		0.420	0.420	0.420	0.420	0.420
Verical	2	IRF820PBF	250	3			0.583	0.583	0.583	0.583
Future Electronics		IRF820PBF	5,331	40	Tube			0.480	0.460	0.430

数据表和文档

下载 Vishay IRF820PBF 的数据表和制造商文档。

IHS

Datasheet7 页2 年前

Datasheet9 页14 年前

Newark

element14 APAC

Farnell

Future Electronics

库存历史记录

3 个月趋势:

-24.52%

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Vishay IRF820PBF 的描述。

Single N-Channel 500 V 3 Ohms Flange Mount Power Mosfet - TO-220AB

Future Electronics

Power MOSFET, N Channel, 500 V, 2.5 A, 3 ohm, TO-220AB, Through Hole

Avnet

Power Field-Effect Transistor, 2.5A I(D), 500V, 3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 500V, 2.5A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:2.5A; Drain Source Voltage Vds:500V; On Resistance Rds(on):3ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:2.5A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Junction to Case Thermal Resistance A:2.5°C/W; Lead Spacing:2.54mm; No. of Transistors:1; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1 g; 2 d/tab; 3 s; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:10A; Termination Type:Through Hole; Voltage Vds Typ:500V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V

element14 APAC