onsemi FQD3P50TM

P-Channel Power MOSFET, QFET®, -500 V, -2.1 A, 4.9 Ω, DPAK

TRANSISTOR,MOSFET,P-CHANNEL,500V V(BR)DSS,2.1A I(D),TO-252AA

In a Pack of 10, FQD3P50TM P-Channel MOSFET, 1.33 A, 500 V QFET, 3-Pin DPAK ON Semiconductor

Trans MOSFET P-CH 500V 2.1A 3-Pin(2+Tab) DPAK T/R / MOSFET P-CH 500V 2.1A DPAK

Power MOSFET, P Channel, 500 V, 2.1 A, 3.9 ohm, TO-252 (DPAK), Surface Mount

Power Field-Effect Transistor, 2.1A I(D), 500V, 4.9ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = -2.1 / Drain-Source Voltage (Vds) V = -500 / ON Resistance (Rds(on)) Ohm = 4.9 / Gate-Source Voltage V = 30 / Fall Time ns = 45 / Rise Time ns = 56 / Turn-OFF Delay Time ns = 35 / Turn-ON Delay Time ns = 12 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = TO-252 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 300 / Power Dissipation (Pd) W = 50