供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2011-05-31
Lifecycle StatusProduction (Last Updated: 4 months ago)
描述
由其分销商提供的 STMicroelectronics STD2N62K3 的描述。
N-channel 620 V, 3 Ohm typ., 2.2 A SuperMESH3(TM) Power MOSFET in DPAK package
Power MOSFET, N Channel, 620 V, 2.2 A, 3 ohm, TO-252 (DPAK), Surface Mount
Power Field-Effect Transistor, 2.2A I(D), 620V, 3.6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
Mosfet, N Ch, 620V, 2.2A, To-252; Channel Type:N Channel; Drain Source Voltage Vds:620V; Continuous Drain Current Id:2.2A; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3.75V Rohs Compliant: Yes |Stmicroelectronics STD2N62K3
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageDPAK
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Continuous Drain Current (ID)2.2 A
Drain to Source Breakdown Voltage620 V
Drain to Source Resistance3.6 Ω
Drain to Source Voltage (Vdss)620 V
Element ConfigurationSingle
Fall Time22 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance340 pF
Max Operating Temperature150 °C
Max Power Dissipation45 W
Min Breakdown Voltage620 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingDigi-Reel®
Power Dissipation45 W
Rds On Max3.6 Ω
Resistance3.6 Ω
Rise Time4.4 ns
Schedule B8541290080
Threshold Voltage3.75 V
Turn-Off Delay Time21 ns
Turn-On Delay Time8 ns
Dimensions
Height2.4 mm
Length6.6 mm
Width6.2 mm