供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2000-10-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
STMicroelectronicsSTD4NK50ZT4
N-CHANNEL 500V - 2.4 Ohm - 3A DPAK Zener-Protected SuperMESH(TM) PowerMOSFET
描述
由其分销商提供的 onsemi FQD4P40TM 的描述。
P-Channel Power MOSFET, QFET®, -400 V, -2.7 A, 3.1 Ω, DPAK
Power Field-Effect Transistor, 2.7A I(D), 400V, 3.1ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
MOSFET, P-CH, -400V, -2.7A, TO-252-3; Transistor Polarity: P Channel; Continuous Drain Current Id: -2.7A; Drain Source Voltage Vds: -400V; On Resistance Rds(on): 2.44ohm; Rds(on) Test Vo; Available until stocks are exhausted
These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for electronic lamp ballast based on complimentary half bridge.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageDPAK
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals2
Weight260.37 mg
Technical
Continuous Drain Current (ID)2.7 A
Current Rating-2.7 A
Drain to Source Breakdown Voltage-400 V
Drain to Source Resistance3.1 Ω
Drain to Source Voltage (Vdss)-400 V
Element ConfigurationSingle
Fall Time37 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance680 pF
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage400 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation2.5 W
Rds On Max3.1 Ω
Rise Time55 ns
Schedule B8541290080
Turn-Off Delay Time35 ns
Turn-On Delay Time13 ns
Voltage Rating (DC)-400 V
Dimensions
Height2.517 mm