onsemi FQD2N60CTM

Name: onsemi FQD2N60CTM
Brand: onsemi
SKU: FQD2N60CTM

N-channel Power Mosfet, Qfet®, 600 V, 1.9 A, 4.7 Ω, Dpak

$ 0.406

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	FQD2N60CTM	203					0.396	0.329	0.293	3h
DigiKey	2	FQD2N60CTMCT-ND	2,344	1	Cut Tape	1.400	0.880	0.582	0.412	0.412
Onlinecomponents.com		FQD2N60CTM	0	100	Bulk			0.553	0.406	0.291
Avnet		FQD2N60CTM	0	2500						0.278	5h
Future Electronics		FQD2N60CTM	0	2500	Tape & Reel					0.310

数据表和文档

下载 onsemi FQD2N60CTM 的数据表和制造商文档。

Upverter

Technical Drawing1 页3 年前

Datasheet9 页3 年前

IHS

Master Electronics

onsemi

Newark

库存历史记录

3 个月趋势:

-0.35%

CAD 模型

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SnapEDA		3D	下载

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供应链

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FQD2N60CTM 的描述。

N-Channel Power MOSFET, QFET®, 600 V, 1.9 A, 4.7 Ω, DPAK

onsemi

Power MOSFET, N Channel, 600 V, 1.9 A, 3.6 ohm, TO-252AA, Surface Mount

Avnet

Power Field-Effect Transistor, 1.9A I(D), 600V, 4.7ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252

IHS

MOSFET, N-CH, 600V, 1.9A, TO-252AA-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.9A; Drain Source Voltage Vds:600V; On Resistance Rds(on):3.6ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V;

element14 APAC

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.

Fairchild Semiconductor