onsemi FQA170N06

N-Channel Power MOSFET, QFET®, 60 V, 170 A, 5.6 mΩ, TO-3P

Trans MOSFET N-CH 60V 170A 3-Pin(3+Tab) TO-3P(N) Rail

N-Channel 60 V 5.6 mOhm Through Hole Mosfet - TO-3PN

FAIRCHILD SEMICONDUCTORFQA170N06N CHANNEL MOSFET, 60V, 170A, TO-3PN

Power Field-Effect Transistor, 170A I(D), 60V, 0.0056ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

FQA170N06 - POWER MOSFET, N-CHAN

60V 170A 4.5´Î@10V85A 375W 4V@250uA 620pF@25V N Channel 7.2nF@25V 220nC@10V -55¡Í~+175¡Í@(Tj) TO-3 MOSFETs ROHS

MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:60V; On Resistance Rds(on):5.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Transistor Case Style:TO-3P; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:170A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; No. of Transistors:1; Package / Case:TO-3P; Power Dissipation Pd:375W; Power Dissipation Pd:375W; Power Dissipation Ptot Max:375W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:60V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, audio amplifier, DC motor control, and variable switching power applications.