Infineon IRFP2907PBF

Name: Infineon IRFP2907PBF
Brand: Infineon
SKU: IRFP2907PBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 4.5MILLIOHMS; Id 209A; TO-247AC; Pd 470W; -55DE

$ 2.521

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制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Avnet		IRFP2907PBF	333	25				2.338	2.237	2.237	5h
Newark		IRFP2907PBF	732	1		6.230	4.360	3.760	3.640	3.640
Arrow Electronics		IRFP2907PBF	389	1		2.483	2.483	2.207	2.207	2.207
Future Electronics	2	IRFP2907PBF	2,075	25	Tube			2.600	2.540	2.490
Rochester Electronics		IRFP2907PBF	720					2.420	2.170	2.040	2h

数据表和文档

下载 Infineon IRFP2907PBF 的数据表和制造商文档。

Newark

Datasheet9 页14 年前

Datasheet9 页16 年前

Datasheet10 页20 年前

Datasheet9 页20 年前

IHS

iiiC

RS (Formerly Allied Electronics)

Jameco

库存历史记录

3 个月趋势:

+30.11%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2000-04-25

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRFP2907PBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 4.5Milliohms;ID 209A;TO-247AC;PD 470W;-55de

RS (Formerly Allied Electronics)

75V Single N-Channel HEXFET Power MOSFET in a TO-247AC package, TO247-3, RoHS

Infineon SCT

IRFP2907PBF,MOSFET, 75V, 177A, 4.5 MOHM, 410 NC QG, TO-247AC

Jameco

Power Field-Effect Transistor, 90A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC

IHS

N CH MOSFET, 75V, 209A, TO-247AC; Transi; Transistor Polarity:N Channel; Continuous Drain Current Id:209A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:470W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-247AC; No. of Pins:3; SVHC:No SVHC (19-Dec-2012); Current Id Max:209A; Junction to Case Thermal Resistance A:0.45°C/W; Package / Case:TO-247AC; Power Dissipation Pd:470W; Power Dissipation Pd:330W; Pulse Current Idm:840A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon