Infineon IRFB3207ZPBF

Name: Infineon IRFB3207ZPBF
Brand: Infineon
SKU: IRFB3207ZPBF

MOSFET N-CH 75V 120A TO-220AB / Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube

$ 1.293

Production

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价格与库存

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Distributor		SKU		Min	Pkg
Newark		IRFB3207ZPBF	251	1		3.890	2.190	2.030	1.780	1.780
Arrow Electronics	2	IRFB3207ZPBF	1,500	1		0.751	0.751	0.751	0.751	0.751
Rochester Electronics	2	IRFB3207ZPBF	4,957					1.550	1.290	1.150	19m
DigiKey		IRFB3207ZPBF-ND	4,997	1	Tube	3.770	3.770	1.716	1.296	1.139
RS (Formerly Allied Electronics)		IRFB3207ZPBF	0	100	Bulk			3.340	3.010	3.010	17h

数据表和文档

下载 Infineon IRFB3207ZPBF 的数据表和制造商文档。

IHS

Datasheet0 页0 年前

Datasheet12 页12 年前

Datasheet0 页0 年前

Newark

iiiC

DigiKey

库存历史记录

3 个月趋势:

-0.28%

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InfineonIRFB3207ZPBF

InfineonIRFB3207ZGPBF

Price @ 1000

$ 1.293

$ 1.22

Stock

1,041,223

143,740

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

120 A

Threshold Voltage

4 V

Rds On Max

4.1 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

6.92 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2007-05-03

Lifecycle StatusProduction (Last Updated: 3 months ago)

描述

由其分销商提供的 Infineon IRFB3207ZPBF 的描述。

MOSFET N-CH 75V 120A TO-220AB / Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube

Win Source

MOSFET, N Ch., 75V, 170A, 4.1 MOHM, 120NC QG, TO-220AB, Pb-Free

RS (Formerly Allied Electronics)

Single N-Channel 75 V 4.1 mOhm 170 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W

Distrelec

2.5W,44W 20V 4V@ 250uA 15nC@ 10V 1N 100V 530m¦¸@ 3.3A,10V 6.6A 470pF@25V TO-220AB

UnikeyIC

Benefits: RoHS Compliant | Target Applications: AC-DC; Battery Operated Drive

Infineon

Power Field-Effect Transistor, 120A I(D), 75V, 0.0041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 75V, TO-220AB; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.1mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:300W; Operating Temperature Range:-55°C to +175°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Base Number:3207; Current Id Max:120A; N-channel Gate Charge:120nC; Package / Case:TO-220AB; Power Dissipation Pd:300W; Power Dissipation Pd:300mW; Pulse Current Idm:670A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V

element14 APAC