Infineon IRF2907ZPBF

Name: Infineon IRF2907ZPBF
Brand: Infineon
SKU: IRF2907ZPBF

Mosfet, Power; N-ch; Vdss 75V; Rds(on) 3.5MILLIOHMS; Id 170A; TO-220AB; Pd 300W; -55DE

$ 1.72

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Arrow Electronics	2	IRF2907ZPBF	2,566	1		3.695	2.509	1.978	1.730	1.730
Rutronik		TMOSP11743	1,300	50				2.140	1.710	1.710	23h
Rochester Electronics	2	IRF2907ZPBF	100,943					1.580	1.410	1.330	16h
RS (Formerly Allied Electronics)		IRF2907ZPBF	0	100	Bulk			5.530	4.970	4.970	7h
Farnell		IRF2907ZPBF	0	1		4.420*	3.009*	1.894*	1.894*	1.894*	16h

数据表和文档

下载 Infineon IRF2907ZPBF 的数据表和制造商文档。

IHS

Datasheet11 页15 年前

Datasheet12 页15 年前

Datasheet13 页21 年前

Farnell

Newark

iiiC

RS (Formerly Allied Electronics)

库存历史记录

3 个月趋势:

+283%

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InfineonIRF2907ZPBF

InfineonAUIRF2907Z

Price @ 1000

$ 1.72

$ 1.485

Stock

404,744

188,405

Authorized Distributors

Mount

Through Hole

Case/Package

TO-220AB

Drain to Source Voltage (Vdss)

75 V

Continuous Drain Current (ID)

75 A

Threshold Voltage

4 V

2 V

Rds On Max

4.5 mΩ

Gate to Source Voltage (Vgs)

20 V

Power Dissipation

300 W

Input Capacitance

7.5 nF

供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2004-06-17

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2025-03-31

LTD Date2025-09-30

描述

由其分销商提供的 Infineon IRF2907ZPBF 的描述。

MOSFET, Power;N-Ch;VDSS 75V;RDS(ON) 3.5Milliohms;ID 170A;TO-220AB;PD 300W;-55de

RS (Formerly Allied Electronics)

Single N-Channel 75 V 4.5 mOhm 180 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 300 W

Distrelec

Trans MOSFET N-CH Si 75V 170A 3-Pin(3+Tab) TO-220AB Tube

Verical

Power Field-Effect Transistor, 75A I(D), 75V, 0.0045ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, 75V, 170A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:170A; Drain Source Voltage Vds:75V; On Resistance Rds(on):4.5mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:330W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Current Id Max:75A; Device Marking:IRF2907ZPBF; Package / Case:TO-220; Power Dissipation Pd:330W; Power Dissipation Pd:330W; Pulse Current Idm:680A; Termination Type:Through Hole; Voltage Vds Typ:75V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon