供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2001-07-23
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2006-10-05
LTD Date2007-04-05
相关零件
STMicroelectronicsSTGB30H60DLFB
HB Series 600 V 60 A 260 W Surface Mount Trench Gate Field-Stop IGBT - D2PAK-3
描述
由其分销商提供的 onsemi FGB40N6S2T 的描述。
Not available to order 600V N-Channel IGBT SMPS II Series
IGBT 600V 75A 290W Surface Mount TO-263AB
Tape & Reel (TR) Surface Mount N-CHANNEL SINGLE IGBT Transistor 2.7V @ 15V 20A 75A 290W 8ns/35ns
Insulated Gate Bipolar Transistor, 75A I(C), 600V V(BR)CES, N-Channel, TO-263AB
BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT;
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-263-3
MountSurface Mount
Number of Pins3
Number of Terminals2
Technical
Collector Emitter Breakdown Voltage600 V
Collector Emitter Saturation Voltage1.9 V
Collector Emitter Voltage (VCEO)600 V
Continuous Collector Current75 A
Current Rating75 A
Element ConfigurationSingle
Fall Time105 ns
Max Breakdown Voltage600 V
Max Collector Current75 A
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation290 W
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation290 W
Rise Time10 ns
Turn-Off Delay Time35 ns
Turn-On Delay Time8 ns
Voltage Rating (DC)600 V
Dimensions
Height5.08 mm