备用零件
Price @ 1000
$ 1.085
$ 1.166
Stock
797,970
892,579
Authorized Distributors
6
4
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-1.8 V
-1.8 V
Rds On Max
4.6 mΩ
4.6 mΩ
Gate to Source Voltage (Vgs)
25 V
20 V
Power Dissipation
1 W
2.5 W
Input Capacitance
7.54 nF
5.25 nF
供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
相关零件
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 onsemi FDS6681Z 的描述。
P-Channel 30 V 4.6 mOhm Surface Mount PowerTrench Mosfet - SOIC-8
P-Channel PowerTrench® MOSFET, 30V, -20A, 4.6mΩ
ON SEMICONDUCTOR - FDS6681Z - MOSFET Transistor, P Channel, -20 A, -30 V, 0.0038 ohm, -10 V, -1.8 V
30 VOLT P-CHANNEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET
This P-channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance.This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight130 mg
Technical
Continuous Drain Current (ID)20 A
Current Rating-20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time380 ns
Gate to Source Voltage (Vgs)25 V
Input Capacitance7.54 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation1 W
Rds On Max4.6 mΩ
Resistance4.6 MΩ
Rise Time9 ns
Schedule B8541290080
TerminationSMD/SMT
Threshold Voltage-1.8 V
Turn-Off Delay Time660 ns
Turn-On Delay Time20 ns
Voltage Rating (DC)-30 V
Dimensions
Height1.75 mm
Length5 mm
Width4 mm