Infineon IRF7832PBF

Name: Infineon IRF7832PBF
Brand: Infineon
SKU: IRF7832PBF

Mosfet, Power; N-ch; Vdss 30V; Rds(on) 3.1MILLIOHMS; Id 20A; SO-8; Pd 2.5W; Vgs +/-20V

Obsolete

制造商页面数据表

价格与库存

授权分销商

未经授权的库存分销商

非授权经销商

查看所有价格优惠

Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7832PBF	0	3800	Bulk					0.940	23h
Farnell	IRF7832PBF	0	5			1.211*	0.833*	0.514*	0.504*	6h
Win Source	WS-IRF7832PBF	28,090	120					0.317	0.285	8h
Worldway Electronics	IRF7832PBF	10,658	7	Tube		0.108	0.105	0.099	0.099	6h
ICPartonline	IRF7832PBF	36,561			0.630	0.599	0.567	0.536	0.504	3d

数据表和文档

下载 Infineon IRF7832PBF 的数据表和制造商文档。

Newark

Datasheet10 页20 年前

IHS

TME

RS (Formerly Allied Electronics)

Jameco

CAD 模型

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供应链

Lifecycle StatusObsolete (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF7832PBF 的描述。

MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 30 V 4.8 mOhm 51 nC HEXFET® Power Mosfet - SOIC-8

Future Electronics

HEXFET POWER MOSFET Power Field-Effect Transistor, 20A I(D), 30V, 0.004ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

ComSIT Distribution GmbH

Benefits: RoHS Compliant; Industry-leading quality; Low RDS(ON) at 4.5V VGS; Fully Characterized Avalanche Voltage and Current; Ultra-Low Gate Impedance

Infineon

MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:20A; On Resistance, Rds(on):4mohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:8-SOIC ;RoHS Compliant: Yes

Newark

MOSFET, N, LOGIC, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.32V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:20A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; No. of Transistors:1; Package / Case:SOIC; Pin Format:1 S; 2 S; 3 S; 4 G; 5 D; 6 D; 7 D; 8 D; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:160A; Row Pitch:6.3mm; SMD Marking:IRF7832PBF; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:2.32V; Voltage Vgs Rds on Measurement:10V

element14 APAC