价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Arrow Electronics | IRF9310TRPBF | 17 | 1 | |||||||||
| Avnet | IRF9310TRPBF | 16,000 | 4K | 2d | ||||||||
| RS (Formerly Allied Electronics) | IRF9310TRPBF | 0 | 10 | Bulk | 13h | |||||||
| Farnell | IRF9310TRPBF | 0 | 5 | Cut Tape | 7h | |||||||
| Microchip USA | IRF9310TRPBF | 336 | 600 | 4d |
备用零件
Price @ 1000
$ 1.166
$ 1.085
Stock
892,579
832,662
Authorized Distributors
4
6
Mount
Surface Mount
Surface Mount
Case/Package
SOIC
SOIC
Drain to Source Voltage (Vdss)
-30 V
-30 V
Continuous Drain Current (ID)
20 A
20 A
Threshold Voltage
-1.8 V
-1.8 V
Rds On Max
4.6 mΩ
4.6 mΩ
Gate to Source Voltage (Vgs)
20 V
25 V
Power Dissipation
2.5 W
1 W
Input Capacitance
5.25 nF
7.54 nF
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2009-11-24
Lifecycle StatusObsolete (Last Updated: 3 months ago)
LTB Date2025-12-31
LTD Date2026-12-31
相关零件
InfineonIRF7832TRPBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
InfineonIRF7832PBF
MOSFET, Power;N-Ch;VDSS 30V;RDS(ON) 3.1Milliohms;ID 20A;SO-8;PD 2.5W;VGS +/-20V
描述
由其分销商提供的 Infineon IRF9310TRPBF 的描述。
Single P-Channel 30V 6.8 mOhm 58 nC HEXFET® Power Mosfet - SOIC-8
Trans MOSFET P-CH 30V 20A 8-Pin SOIC N T/R
30V 20A 4.6mΩ@10V,20A 2.5W 2.4V@100uA P Channel SOIC-8-150mil MOSFETs ROHS
-30V Single P-Channel HEXFET Power MOSFET in a SO-8 package, SO8, RoHS
Infineon SCT
Benefits: RoHS Compliant; P-Channel MOSFET | Target Applications: Battery Protection; Load Switch High Side; Load Switch Low Side
Small Signal Field-Effect Transistor, 20A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA
P CHANNEL, MOSFET, -30V, -20A, SOIC; Tra; P CHANNEL, MOSFET, -30V, -20A, SOIC; Transistor Polarity:P Channel; Continuous Drain Current Id:-20A; Drain Source Voltage Vds:-30V; On Resistance Rds(on):3.9mohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.8V
Transistor Polarity = P-Channel / Configuration = Single / Continuous Drain Current (Id) A = 20 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 4.6 / Gate-Source Voltage V = 20 / Fall Time ns = 70 / Rise Time ns = 47 / Turn-OFF Delay Time ns = 65 / Turn-ON Delay Time ns = 25 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SO-8 / Pins = 8 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Power Dissipation (Pd) W = 2.5
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageSOIC
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals8
Technical
Continuous Drain Current (ID)20 A
Drain to Source Breakdown Voltage-30 V
Drain to Source Resistance4.6 mΩ
Drain to Source Voltage (Vdss)-30 V
Element ConfigurationSingle
Fall Time70 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance5.25 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs-1.8 V
Number of Channels1
Number of Elements1
On-State Resistance4.6 mΩ
Package Quantity4000
PackagingTape & Reel
Power Dissipation2.5 W
Rds On Max4.6 mΩ
Resistance4.6 MΩ
Rise Time47 ns
Schedule B8541290080
Threshold Voltage-1.8 V
Turn-Off Delay Time65 ns
Turn-On Delay Time25 ns
Dimensions
Height1.75 mm
Length4.9784 mm
Width3.9878 mm