This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3A; Drain Source Voltage Vds:250V; On Resistance Rds(on):117mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:12.5mJ; Capacitance Ciss Typ:1960pF; Current Id Max:3A; On State Resistance Max:117mohm; Package / Case:SOIC; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Voltage Vds Typ:250V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V