onsemi FDS2672

Name: onsemi FDS2672
Brand: onsemi
SKU: FDS2672

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

$ 0.997

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Distributor		SKU		Min	Pkg
Future Electronics	3	FDS2672	200,000	2500	Tape & Reel					1.440
Newark	2	FDS2672	2,776	1	Cut Tape	3.020	2.080	1.530	1.280	1.280
Arrow Electronics		FDS2672	2,500	2500						0.876
Verical		FDS2672	2,500	2500						0.881
DigiKey	3	FDS2672CT-ND	7,098	1	Cut Tape	2.970	1.922	1.323	1.010	1.010

数据表和文档

下载 onsemi FDS2672 的数据表和制造商文档。

IHS

Datasheet6 页20 年前

Datasheet7 页2 年前

Newark

Upverter

onsemi

element14 APAC

库存历史记录

3 个月趋势:

-42.77%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-09-01

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDS2672 的描述。

N-Channel UltraFET Trench® MOSFET 200V, 3.9A, 70mΩ

onsemi

N-Channel 200 V 70 mOhm UltraFET Trench® Mosfet - SOIC-8

Future Electronics

Power MOSFET, N Channel, 200 V, 3.9 A, 0.07 ohm, SOIC, Surface Mount

Avnet

Transistor; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:200V; Continuous Drain Current, Id:3.9A; On Resistance, Rds(on):0.07ohm; Rds(on) Test Voltage, Vgs:2.9V; Threshold Voltage, Vgs Typ:20V ;RoHS Compliant: Yes

Newark

This single N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced UItraFET Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Fairchild Semiconductor

MOSFET, N, SO-8; Transistor Polarity:N; Max Current Id:3.9A; Max Voltage Vds:200V; On State Resistance:0.07ohm; Rds Measurement Voltage:10V; Max Voltage Vgs:20V; Power Dissipation:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:Cobalt dichloride; Avalanche Single Pulse Energy Eas:37.5mJ; Case Style:SOIC; Cont Current Id:3.9A; Max On State Resistance:0.07ohm; Max Voltage Vgs th:4V; Min Voltage Vgs th:2V; Pin Configuration:D(5,6,7,8), S(1,2,3), G(4); Power Dissipation Pd:2.5W; Pulse Current Idm:50A; Termination Type:SMD; Transistor Type:MOSFET; Typ Capacitance Ciss:1905pF; Typ Voltage Vds:200V; Typ Voltage Vgs th:2.9V; Voltage Vgs Rds on Measurement:10V; SVHC (Additional):Bis (2-ethyl(hexyl)phthalate) (DEHP)

Farnell