Infineon IRF7492PBF

Name: Infineon IRF7492PBF
Brand: Infineon
SKU: IRF7492PBF

Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC

$ 0.87

Obsolete

制造商页面数据表

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Distributor	SKU		Min	Pkg
RS (Formerly Allied Electronics)	IRF7492PBF	0	665	Bulk				0.870	0.787	10h
Farnell	IRF7492PBF	0	1		1.650*	1.650*	0.900*	0.682*	0.682*	17h
Win Source	WS-IRF7492PBF	105	40				1.320	1.073	1.073	18h
Worldway Electronics	IRF7492PBF	12,819	7	Tube		0.241	0.234	0.222	0.222	17h
GreenTree Electronics	IRF7492PBF	100								3d

数据表和文档

下载 Infineon IRF7492PBF 的数据表和制造商文档。

IHS

Datasheet8 页19 年前

Newark

iiiC

供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2002-06-27

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-03-12

LTD Date2013-09-12

描述

由其分销商提供的 Infineon IRF7492PBF 的描述。

Trans MOSFET N-CH 200V 3.7A 8-Pin SOIC

Verical

200V Single N-Channel HEXFET Power MOSFET in a SO-8 package

International Rectifier

MOSFET Operating temperature: -55...150 °C Housing type: SO-8 Polarity: N Power dissipation: 2.5 W

Distrelec

MOSFET, 200V, 3.7A, 79 MOHM, 39 NC QG, SO-8

RS (Formerly Allied Electronics)

N-Ch 200V 3,7A 2,5W 0,079R SO8

Schukat

Power Field-Effect Transistor, 3.7A I(D), 200V, 0.079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA

IHS

MOSFET, N, SO-8; Transistor Polarity:N Channel; Continuous Drain Current Id:3.7A; Drain Source Voltage Vds:200V; On Resistance Rds(on):79mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.5V; Power Dissipation Pd:2.5W; Transistor Case Style:SOIC; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:3.7A; Current Temperature:25°C; External Depth:5.2mm; External Length / Height:1.75mm; External Width:4.05mm; Full Power Rating Temperature:25°C; Package / Case:SOIC; Power Dissipation Pd:2.5W; Power Dissipation Pd:2.5W; Pulse Current Idm:30A; SMD Marking:F7492; Termination Type:SMD; Voltage Vds Typ:200V; Voltage Vgs Max:2.5V; Voltage Vgs Rds on Measurement:10V

element14 APAC