Technical
Continuous Drain Current (ID)3.7 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance78 mΩ
Drain to Source Voltage (Vdss)200 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Nominal Vgs4 V
Number of Channels1
Number of Elements1
On-State Resistance78 mΩ
Package Quantity3800
Power Dissipation2.5 W
Rds On Max78 mΩ
Rise Time3.2 ns
Threshold Voltage4 V
Turn-Off Delay Time14 ns
Turn-On Delay Time7.1 ns