备用零件
Price @ 1000
$ 1.18
$ 0.919
Stock
240,036
77,042
Authorized Distributors
6
6
Mount
Through Hole
Through Hole
Case/Package
TO-220
TO-220-3
Drain to Source Voltage (Vdss)
250 V
250 V
Continuous Drain Current (ID)
28 A
51 A
Threshold Voltage
5 V
-
Rds On Max
60 mΩ
60 mΩ
Gate to Source Voltage (Vgs)
30 V
30 V
Power Dissipation
320 W
38 W
Input Capacitance
3.41 nF
3.41 nF
供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2005-09-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
描述
由其分销商提供的 onsemi FDPF51N25 的描述。
N-Channel Power MOSFET, UniFETTM, 250V, 51A, 60mΩ, TO-220F
N-Channel 250 V 60 mOhm Flange Mount Mosfet - TO-220F
Power Field-Effect Transistor, 28A I(D), 250V, 0.06ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
MOSFET,N CH,250V,28A,TO220F; Transistor Polarity:N Channel; Continuous Drain Current Id:28A; Drain Source Voltage Vds:250V; On Resistance Rds(on):60mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:117W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:3620pF; Current Id Max:28A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.07°C/W; On State Resistance Max:60mohm; On State Resistance Typ:48mohm; Package / Case:TO-220F; Pin Configuration:G(1),D(2),S(3); Power Dissipation Pd:117W; Power Dissipation Pd:117W; Pulse Current Idm:112A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)28 A
Current Rating28 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance60 mΩ
Drain to Source Voltage (Vdss)250 V
Dual Supply Voltage250 V
Element ConfigurationSingle
Fall Time130 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance3.41 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation117 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Nominal Vgs5 V
Number of Channels1
Number of Elements1
Power Dissipation320 W
Rds On Max60 mΩ
Resistance60 MΩ
Rise Time465 ns
Schedule B8541290080
TerminationThrough Hole
Threshold Voltage5 V
Turn-Off Delay Time98 ns
Turn-On Delay Time62 ns
Voltage Rating (DC)250 V
Dimensions
Height19.5 mm
Length10.36 mm
Width4.9 mm