供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2006-04-07
Lifecycle StatusObsolete (Last Updated: 4 months ago)
LTB Date2023-12-31
LTD Date2024-06-30
相关零件
InfineonIPP17N25S3100AKSA1
250V, N-Ch, 100 mΩ max, Automotive MOSFET, TO-220, OptiMOS™-T, PG-TO220-3, RoHS
描述
由其分销商提供的 Infineon IRFI4229PBF 的描述。
250V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB Full-Pak package
Trans MOSFET N-CH 250V 19A 3-Pin(3+Tab) TO-220AB Full-Pak
MOSFET, 250V, 19A, 46 MOHM, 73 NC QG, TO-220 FULLPACK
Power Field-Effect Transistor, 19A I(D), 250V, 0.046ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Channel Type:N Channel; Drain Source Voltage Vds:250V; Continuous Drain Current Id:19A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:5V; Power Dissipation:46W; No. Of Pins:3Pins Rohs Compliant: Yes |Infineon IRFI4229PBF.
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.
制造商别名
Infineon 在全球拥有多个品牌，分销商可将其用作替代名称。Infineon 也可称为以下名称：
- Infineon Technologies
- INF
- INFINEO
- INFINE
- INFIN
- INFINION
- INFI
- INFENION
- SIM
- INFIEON
- INFINEON TECH
- INFINEN
- IFX
- INFIENON
- IR/INFINEON
- INFINEON/IR
- IFT
- INFINEON/SIEMENS
- LNFINEON
- INFN
- Infineon Tech ICs
- INFINEON TECHNOLOGIE
- NFINEON
- INFINEON/Infineon
- INFINEON TECHNOLOGIES (ASIA
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)19 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance46 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time13 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance4.48 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation46 W
Min Breakdown Voltage250 V
Min Operating Temperature-40 °C
Number of Channels1
Number of Elements1
On-State Resistance46 mΩ
Package Quantity2000
Power Dissipation46 W
Rds On Max46 mΩ
Rise Time17 ns
Schedule B8541290080
Turn-Off Delay Time32 ns
Turn-On Delay Time18 ns
Dimensions
Height19.8 mm
Length10.63 mm
Width4.83 mm