onsemi FDPF33N25T

Name: onsemi FDPF33N25T
Brand: onsemi
SKU: FDPF33N25T

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220F

$ 1.197

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Distributor		SKU		Min	Pkg
Newark		FDPF33N25T	6,690	1		3.630	1.760	1.640	1.580	1.580
Verical	2	FDPF33N25T	600	50				1.628	1.195	1.195
Master Electronics		FDPF33N25T	600	50				1.005	0.935	0.911
Onlinecomponents.com		FDPF33N25T	600	50	Bulk			1.005	0.935	0.911
Rochester Electronics		FDPF33N25T	395					1.430	1.190	1.060	16h

数据表和文档

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官方数据表2 年前

库存历史记录

3 个月趋势:

+5.79%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2006-07-14

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDPF33N25T 的描述。

N-Channel Power MOSFET, UniFETTM, 250 V, 33 A, 94 mΩ, TO-220F

onsemi

Single N-Channel 250 V 0.094 Ohm 48 nC 37 W DMOS Flange Mount Mosfet - TO-220-3

Future Electronics

Trans MOSFET N-CH 250V 33A 3-Pin(3+Tab) TO-220FP Tube / MOSFET N-CH 250V 33A TO-220F

Win Source

TRANSISTOR, N-CHANNEL, UNIFET MOSFET, 250V, 33A, 94 MOHM, TO-220

RS (Formerly Allied Electronics)

250V 33A 37W 94m´Î@10V16.5A 5V@250Ã×A N Channel TO-220F(TO-220IS) MOSFETs ROHS

Dasenic

Power Field-Effect Transistor, 33A I(D), 250V, 0.094ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.

Fairchild Semiconductor

MOSFET, N, TO-220F; Transistor Polarity:N Channel; Continuous Drain Current Id:20A; Drain Source Voltage Vds:250V; On Resistance Rds(on):94mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Power Dissipation Pd:94W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220F; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Capacitance Ciss Typ:1640pF; Current Id Max:33A; Junction Temperature Tj Max:150°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:1.32°C/W; On State Resistance Max:94mohm; On State Resistance Typ:77mohm; Package / Case:TO-220F; Pin Configuration:G(1),D(2),S(3); Power Dissipation Pd:94W; Power Dissipation Pd:94W; Pulse Current Idm:80A; Termination Type:Through Hole; Voltage Vds Typ:250V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5V; Voltage Vgs th Min:3V

element14 APAC