供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2005-10-26
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
描述
由其分销商提供的 onsemi FDPF44N25T 的描述。
N-Channel Power MOSFET, UniFETTM, 250V, 44A, 69mΩ, TO-220F
N-Channel 250 V 0.069 Ohm Through Hole Mosfet TO-220F
MOSFET, N CH, 250V, 0.058OHM, 44A, TO-220F-3
Power Field-Effect Transistor, 44A I(D), 250V, 0.069ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
38W(Tc) 30V 5V@ 250µA 61nC@ 10 V 1individualNChannel 250V 69mΩ@ 22A,10V 44A 2.87nF@25V TO-220F-3 Through hole mounting 10.36mm*4.9mm*16.07mm
MOSFET, N CH, 250V, 44A, TO-220F-3; Transistor Polarity:N Channel; Continuous Drain Current Id:44A; Drain Source Voltage Vds:250V; On Resistance Rds(on):0.058ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:38W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:TO-220F; No. of Pins:3; MSL:-; SVHC:No SVHC (20-Jun-2013)
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)44 A
Drain to Source Breakdown Voltage250 V
Drain to Source Resistance69 mΩ
Drain to Source Voltage (Vdss)250 V
Element ConfigurationSingle
Fall Time112 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.87 nF
Max Operating Temperature150 °C
Max Power Dissipation38 W
Min Breakdown Voltage250 V
Min Operating Temperature-55 °C
Number of Elements1
Rds On Max69 mΩ
Resistance69 mΩ
Rise Time402 ns
Schedule B8541290080
Threshold Voltage3 V
Turn-Off Delay Time85 ns
Turn-On Delay Time53 ns
Dimensions
Height16.07 mm
Length10.36 mm
Width4.9 mm