供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2004-03-22
Lifecycle StatusObsolete (Last Updated: 1 week ago)
LTB Date2022-06-23
LTD Date2022-12-23
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 1 week ago)
相关零件
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200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB FullPak package
onsemiFQPF12P20XDTU
P-Ch MOSFET 200V 7.3A 470mΩ@3.65A,10V 50W(Tc) 30V 5V@250µA 40nC@10V 1.2nF@25V TO-220F-3 TH 10.67mm × 4.7mm × 16.3mm
描述
由其分销商提供的 onsemi FQPF32N20C 的描述。
Power MOSFET, N-Channel, QFET®, 200 V, 28 A, 82 mΩ, TO-220F
Transistor, mosfet, n-Channel,200V V(Br)Dss,28A I(D),to-220Ab(Fp) Rohs Compliant: Yes |Onsemi FQPF32N20C
200 V N-CHANNEL QFET MOSFET Power Field-Effect Transistor, 28A I(D), 200V, 0.082ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.27 g
Technical
Continuous Drain Current (ID)28 A
Current Rating28 A
Drain to Source Breakdown Voltage200 V
Drain to Source Resistance82 mΩ
Drain to Source Voltage (Vds)200 V
Element ConfigurationSingle
Fall Time210 ns
Gate to Source Voltage (Vgs)30 V
Input Capacitance2.22 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage200 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation50 W
Rds On Max82 mΩ
Rise Time270 ns
Turn-Off Delay Time245 ns
Turn-On Delay Time25 ns
Voltage Rating (DC)200 V
Dimensions
Height19.5 mm
合规
环境分类
China RoHSNon-Compliant
Lead FreeLead Free
Radiation HardeningNo
REACH SVHCAffected
RoHSCompliant
合规声明