供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2007-09-19
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2022-12-30
LTD Date2023-06-30
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
相关零件
InfineonAUIRF1010EZ
Automotive Q101 60V Single N-Channel HEXFET Power MOSFET in a TO-220AB Package
InfineonIRF1010EPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 12 Milliohms;ID 84A;TO-220AB;PD 200W;gFS 69S
InfineonIRF1010EZPBF
MOSFET, Power;N-Ch;VDSS 60V;RDS(ON) 6.8Milliohms;ID 84A;TO-220AB;PD 140W;-55deg
描述
由其分销商提供的 onsemi FDP80N06 的描述。
N-Channel Power MOSFET, UniFETTM, 60 V, 80 A, 10 mΩ, TO-220
Trans MOSFET N-CH 60V 80A 3-Pin(3+Tab) TO-220AB Rail
N-Channel 60 V 10 mOhm Flange Mount Mosfet - TO-220
MOSFET, N-CH, 60V, 80A, 175DEG C, 176W; Available until stocks are exhausted
Power Field-Effect Transistor, 80A I(D), 60V, 0.01ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220AB
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)80 A
Drain to Source Breakdown Voltage60 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time113 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.19 nF
Max Operating Temperature175 °C
Max Power Dissipation176 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
PackagingBulk
Power Dissipation176 W
Rds On Max10 mΩ
Resistance10 MΩ
Rise Time259 ns
Turn-Off Delay Time136 ns
Turn-On Delay Time32 ns
Dimensions
Height16.51 mm
Length10.67 mm
Width4.83 mm