onsemi FDP61N20

N-Channel Power MOSFET, UniFETTM, 200V, 61A, 41mΩ, TO-220

Transistor: N-MOSFET; unipolar; 200V; 38.5A; 417W; TO220; UniFET™

MOSFET N-CH 200V 61A TO-220 / Trans MOSFET N-CH 200V 61A 3-Pin(3+Tab) TO-220 Tube

N-Channel 200 V 41 mO 417 W Flange Mount Mosfet - TO-220

Power Field-Effect Transistor, 61A I(D), 200V, 0.041ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:200V; On Resistance Rds(on):41mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:61A; Package / Case:TO-220; Power Dissipation Pd:417W; Power Dissipation Pd:417W; Pulse Current Idm:244A; Repetitive Avalanche Energy Max:41.7mJ; Termination Type:Through Hole; Voltage Vds Typ:200V; Voltage Vgs Max:5V; Voltage Vgs Rds on Measurement:10V

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts.