Infineon IRFB4227PBF

Name: Infineon IRFB4227PBF
Brand: Infineon
SKU: IRFB4227PBF

MOSFET, Power; N-Ch; VDSS 200V; RDS(ON) 19.7 Milliohms; ID 65A; TO-220AB; PD 330W

$ 0.822

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制造商页面数据表

价格与库存

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Distributor		SKU		Min	Pkg
Avnet	2	IRFB4227PBF	2,111	50				0.819	0.703	0.703	2d
Newark	2	IRFB4227PBF	2,111	50				1.850	1.510	1.510
Future Electronics	2	IRFB4227PBF	21,100	50	Tube			0.850	0.805	0.765
Arrow Electronics	3	IRFB4227PBF	46,861	1		1.765	1.085	1.053	0.722	0.722
Rutronik		TMOSP12121	4,500	50				0.910	0.728	0.728	4h

数据表和文档

下载 Infineon IRFB4227PBF 的数据表和制造商文档。

IHS

Datasheet8 页18 年前

Datasheet9 页18 年前

RS (Formerly Allied Electronics)

Jameco

Burklin Elektronik

iiiC

库存历史记录

3 个月趋势:

-0.21%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-08-18

Lifecycle StatusProduction (Last Updated: 3 weeks ago)

描述

由其分销商提供的 Infineon IRFB4227PBF 的描述。

MOSFET, Power;N-Ch;VDSS 200V;RDS(ON) 19.7 Milliohms;ID 65A;TO-220AB;PD 330W

RS (Formerly Allied Electronics)

200V Single N-Channel HEXFET Power MOSFET PDP Switch in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Infineon Technologies N channel HEXFET power MOSFET, 200 V, 65 A, TO-220, IRFB4227PBF

Burklin Elektronik

Trans MOSFET N-CH 200V 65A 3-Pin(3+Tab) TO-220AB Tube / MOSFET N-CH 200V 65A TO-220AB

Win Source

Single N-Channel 200 V 24 mOhm 98 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

Power MOSFET, N Channel, 200 V, 65 A, 0.024 ohm, TO-220AB, Through Hole

Avnet

HEXFET POWER MOSFET Power Field-Effect Transistor, 65A I(D), 200V, 0.024ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

MOSFET, N, 200V, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:65A; Drain Source Voltage Vds:200V; On Resistance Rds(on):19.7mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5V; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:140mJ; Capacitance Ciss Typ:4600pF; Cont Current Id @ 100°C:46A; Cont Current Id @ 25°C:65A; Current Id Max:65A; Package / Case:TO-220AB; Power Dissipation Pd:190W; Power Dissipation Pd:330W; Pulse Current Idm:260A; Rth:0.45; Termination Type:Through Hole; Voltage Vds:200V; Voltage Vds Typ:200V; Voltage Vgs Max:30V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.

Infineon

Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 65 / Drain-Source Voltage (Vds) V = 200 / ON Resistance (Rds(on)) mOhm = 19.7 / Gate-Source Voltage V = 30 / Fall Time ns = 31 / Rise Time ns = 20 / Turn-OFF Delay Time ns = 21 / Turn-ON Delay Time ns = 33 / Operating Temperature Min. °C = -40 / Operating Temperature Max. °C = 175 / Package Type = TO-220AB / Pins = 3 / Mounting Type = Through Hole / Packaging = Tube / Power Dissipation (Pd) W = 330

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