onsemi FDP3651U

Name: onsemi FDP3651U
Brand: onsemi
SKU: FDP3651U

N-Channel 100 V 18 mOhm PowerTrench® Mosfet - TO-220AB

$ 1.05

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Distributor		SKU		Min	Pkg
Newark		FDP3651U	486	1		3.500	1.950	1.770	1.520	1.500
Verical	2	FDP3651U	379	7			0.895	0.895	0.895	0.895
Arrow Electronics		FDP3651U	379	1		0.895	0.895	0.895	0.895	0.895
Rochester Electronics		FDP3651U	770					1.300	1.080	0.962	1h
DigiKey		FDP3651U-ND	424	1	Tube	3.100	3.100	1.391	1.042	0.956

数据表和文档

下载 onsemi FDP3651U 的数据表和制造商文档。

IHS

Datasheet7 页12 年前

Datasheet0 页0 年前

Fairchild Semiconductor

element14 APAC

onsemi

Farnell

库存历史记录

3 个月趋势:

-26.03%

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供应链

Country of OriginMainland China

Export Control Classification Number (ECCN) CodeEAR99

Introduction Date2006-07-03

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDP3651U 的描述。

N-Channel 100 V 18 mOhm PowerTrench® Mosfet - TO-220AB

Future Electronics

N-Channel PowerTrench® MOSFET 100V, 80A, 18mΩ

onsemi

Power Field-Effect Transistor, 80A I(D), 100V, 0.018ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

IHS

MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):18mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4.5V; Power Dissipation Pd:255W; Transistor Case Style:TO-220; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Alternate Case Style:SOT-78B; Capacitance Ciss Typ:4152pF; Current Id Max:80A; Junction Temperature Tj Max:175°C; Junction Temperature Tj Min:-55°C; Junction to Case Thermal Resistance A:0.59°C/W; On State Resistance Max:18mohm; On State Resistance Typ:15mohm; Package / Case:TO-220; Pin Configuration:G(1),D(2)S(3); Power Dissipation Pd:255W; Power Dissipation Pd:255W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:5.5V; Voltage Vgs th Min:3.5V

element14 APAC