Infineon IRFB4710PBF

Name: Infineon IRFB4710PBF
Brand: Infineon
SKU: IRFB4710PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 0.011 Ohm; Id 75A; TO-220AB; Pd 200W; Vgs +/-20V

$ 1.735

Obsolete

制造商页面数据表

价格与库存

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未经授权的库存分销商

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Distributor		SKU		Min	Pkg
Rochester Electronics	2	IRFB4710PBF	17,304					1.230	1.100	1.030	4h
RS (Formerly Allied Electronics)		IRFB4710PBF	0	1	Bulk	2.700	2.370	2.370	2.370	2.370	21h
Avnet		IRFB4710PBF	0	1K							6h
Farnell		IRFB4710PBF	0	1		3.218*	2.468*	1.950*	1.459*	1.459*	4h
Microchip USA		IRFB4710PBF	143	150	Tube				19.825	19.825	22h

数据表和文档

下载 Infineon IRFB4710PBF 的数据表和制造商文档。

IHS

Datasheet13 页22 年前

Datasheet12 页25 年前

Newark

RS (Formerly Allied Electronics)

iiiC

DigiKey

库存历史记录

3 个月趋势:

-27.74%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2001-03-30

Lifecycle StatusObsolete (Last Updated: 4 months ago)

LTB Date2013-10-03

LTD Date2014-04-03

描述

由其分销商提供的 Infineon IRFB4710PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 0.011Ohm;ID 75A;TO-220AB;PD 200W;VGS +/-20V

RS (Formerly Allied Electronics)

Single N-Channel 100 V 0.014 Ohm 110 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Transistor MOSFET N-CH 100V 75A 3-Pin TO-220AB Tube

Avnet Japan

Trans MOSFET N-CH 100V 75A 3-Pin(3+Tab) TO-220AB

Verical

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 200 W

Distrelec

HEXFET POWER MOSFET Power Field-Effect Transistor, 75A I(D), 100V, 0.014ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

ComSIT Distribution GmbH

N Channel Mosfet, 100V, 75A, To-220Ab; Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:75A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V Rohs Compliant: Yes

Newark

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon

MOSFET, N, 100V, 75A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:75A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:5.5V; Power Dissipation Pd:200W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:75A; Junction to Case Thermal Resistance A:0.74°C/W; On State Resistance Max:14mohm; Package / Case:TO-220AB; Power Dissipation Pd:200W; Power Dissipation Pd:200W; Pulse Current Idm:300A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:5.5V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4.5V

element14 APAC