Infineon IRF8010PBF

Name: Infineon IRF8010PBF
Brand: Infineon
SKU: IRF8010PBF

Mosfet, Power; N-ch; Vdss 100V; Rds(on) 12MILLIOHMS; Id 80A; TO-220AB; Pd 260W; -55DEG

$ 0.979

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制造商页面数据表

价格与库存

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非授权经销商

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Distributor		SKU		Min	Pkg
Newark		IRF8010PBF	494	1		2.620	1.420	1.280	1.020	1.020
Arrow Electronics	3	IRF8010PBF	91,766	1		3.689	3.689	1.647	1.228	1.037
Future Electronics	2	IRF8010PBF	63,100	1K	Tube				0.925	0.885
Rochester Electronics	2	IRF8010PBF	1,100					1.170	0.971	0.866	23h
RS (Formerly Allied Electronics)		IRF8010PBF	27	1	Bulk	1.340	1.340	1.340	1.340	1.340	15h

数据表和文档

下载 Infineon IRF8010PBF 的数据表和制造商文档。

IHS

Datasheet10 页21 年前

Datasheet9 页21 年前

Datasheet9 页23 年前

Newark

RS (Formerly Allied Electronics)

Jameco

iiiC

库存历史记录

3 个月趋势:

+39.52%

CAD 模型

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供应链

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2002-08-23

Lifecycle StatusProduction (Last Updated: 4 months ago)

描述

由其分销商提供的 Infineon IRF8010PBF 的描述。

MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 12Milliohms;ID 80A;TO-220AB;PD 260W;-55deg

RS (Formerly Allied Electronics)

Transistor MOSFET N Channel 100 Volt 80a 3-Pin 3+ Tab TO-220AB

Jameco

Single N-Channel 100 V 15 mOhm 81 nC HEXFET® Power Mosfet - TO-220-3

Future Electronics

100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package, TO220-3, RoHS

Infineon SCT

Power MOSFET, N Channel, 100 V, 80 A, 0.015 ohm, TO-220AB, Through Hole

Avnet

MOSFET Operating temperature: -55...175 °C Housing type: TO-220AB Polarity: N Power dissipation: 260 W

Distrelec

Power Field-Effect Transistor, 75A I(D), 100V, 0.015ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Semicontronic

MOSFET, N, 100V, 80A, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:80A; Drain Source Voltage Vds:100V; On Resistance Rds(on):15mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:260W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Current Id Max:80A; Junction to Case Thermal Resistance A:0.57°C/W; On State resistance @ Vgs = 10V:15ohm; Package / Case:TO-220AB; Power Dissipation Pd:260W; Power Dissipation Pd:260W; Pulse Current Idm:320A; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V

element14 APAC

The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various applications such as DC motors, inverters, SMPS, lighting, load switches as well as battery powered applications.The devices are available in a variety of surface mount and through-hole packages with industry standard footprints for ease of design.

Infineon