供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2002-04-30
Lifecycle StatusNRND (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE, NOT REC (Last Updated: 5 years ago)
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MOSFET, Power;N-Ch;VDSS 100V;RDS(ON) 11Milliohms;ID 73A;TO-220AB;PD 190W;-55deg
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描述
由其分销商提供的 onsemi FDP3652 的描述。
Trans MOSFET N-CH 100V 9A Automotive 3-Pin(3+Tab) TO-220AB Tube
N-Channel PowerTrench® MOSFET, 100V, 61A, 16mΩ
N-Channel 100 V 16 mO PowerTrench Mosfet - TO-220AB
100V 61A 150W 16m´Î@10V61A 4V@250Ã×A N Channel TO-220(TO-220-3) MOSFETs ROHS
Power Field-Effect Transistor, 9A I(D), 100V, 0.016ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
150W(Tc) 20V 4V@ 250µA 53nC@ 10V 1individualNChannel 100V 16mΩ@ 61A,10V 9A，61A 2.88nF@25V TO-220-3 Through hole mounting 10.67mm*4.7mm*16.3mm
Transistor Polarity:n Channel; Drain Source Voltage Vds:100V; Continuous Drain Current Id:61A; On Resistance Rds(On):0.014Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Product Range:- Rohs Compliant: Yes
MOSFET, N, TO-220; Transistor Polarity:N Channel; Continuous Drain Current Id:61A; Drain Source Voltage Vds:100V; On Resistance Rds(on):14mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Avalanche Single Pulse Energy Eas:182mJ; Capacitance Ciss Typ:2880pF; Current Id Max:61A; Current Temperature:25°C; Full Power Rating Temperature:25°C; Lead Spacing:2.54mm; No. of Transistors:1; On State resistance @ Vgs = 10V:14mohm; Package / Case:TO-220AB; Pin Configuration:a; Pin Format:1G, (2+Tab)D, 3S; Power Dissipation Pd:150W; Power Dissipation Pd:150W; Power Dissipation Ptot Max:150W; Pulse Current Idm:70A; Reverse Recovery Time trr Typ:62ns; Termination Type:Through Hole; Voltage Vds Typ:100V; Voltage Vgs Max:4V; Voltage Vgs Rds on Measurement:10V; Voltage Vgs th Max:4V; Voltage Vgs th Min:2V
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight1.8 g
Technical
Continuous Drain Current (ID)9 A
Current Rating61 A
Drain to Source Breakdown Voltage100 V
Drain to Source Resistance16 mΩ
Drain to Source Voltage (Vdss)100 V
Element ConfigurationSingle
Fall Time45 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance2.88 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation150 W
Min Breakdown Voltage100 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation150 W
Rds On Max16 mΩ
Resistance16 MΩ
Rise Time85 ns
Schedule B8541290080
Threshold Voltage4 V
Turn-Off Delay Time26 ns
Turn-On Delay Time12 ns
Voltage Rating (DC)100 V
Dimensions
Height20.4 mm
Length10.67 mm
Width4.83 mm