供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2010-05-07
Lifecycle StatusObsolete (Last Updated: 1 month ago)
LTB Date2022-04-02
LTD Date2022-10-02
相关零件
STMicroelectronicsSTP210N75F6
N-channel 75 V, 3 mOhm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
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MOSFET N-CH 60V 120A TO220-3 N-Channel 60 V 120A (Tc) 188W (Tc) Through Hole PG-TO220-3
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MOSFET N-CH 60V 120A TO220-3 N-Channel 60 V 120A (Tc) 250W (Tc) Through Hole PG-TO220-3
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MOSFET N-CH 60V 90A TO220-3 N-Channel 60 V 90A (Tc) 188W (Tc) Through Hole PG-TO220-3
描述
由其分销商提供的 STMicroelectronics STP260N6F6 的描述。
N-channel 60 V, 0.0024 Ohm, 120 A STripFET(TM) VI DeepGATE(TM) Power MOSFET in TO-220 package
STP260N6F6 N-CHANNEL MOSFET TRANSISTOR, 120 A, 60 V, 4-PIN TO-220
Trans MOSFET N-CH 60V 120A 3-Pin(3+Tab) TO-220AB Tube
MOSFET, N CH, 60V, 120A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0024ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 2V; Pow
Power Field-Effect Transistor, 120A I(D), 60V, 0.003ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
STMicroelectronics NChannel EnhancedMOSTube DeepGate, STripFETseries, Vds=60 V, 120 A, TO-220encapsulation, Through hole mounting, 3Pin
制造商别名
STMicroelectronics 在全球拥有多个品牌，分销商可将其用作替代名称。STMicroelectronics 也可称为以下名称：
- ST MICRO
- STM
- SGS
- SGS THOMSON
- INMOS
- STMICROE
- STMICROEL
- STMICR
- ST MIC
- ST MICROELECTRONIC
- SGS THOMPSON
- SESCOSEM
- STMICROELECT
- ST8
- STMICROELECTRON
- WAFERSCALE
- SGS-ATES
- ST MICROELECTRONICS SEMI
- ST/SGS
- ST MICROELECTRO
- SGST
- THOMS
- STMICROELE
- WAFERSCALE INTEGRATION INC
- SGS-Thomson Microelectronics
- ST Microeletronics
技术规格
Physical
Case/PackageTO-220
MountThrough Hole
Number of Pins3
Number of Terminals3
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3 mΩ
Drain to Source Voltage (Vdss)60 V
Element ConfigurationSingle
Fall Time62.6 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance11.4 nF
Max Operating Temperature175 °C
Max Power Dissipation300 W
Min Breakdown Voltage60 V
Min Operating Temperature-55 °C
Number of Elements1
Power Dissipation300 W
Rds On Max3 mΩ
Resistance3 MΩ
Rise Time165 ns
Schedule B8541290080
Threshold Voltage2 V
Turn-Off Delay Time144.4 ns
Turn-On Delay Time31.4 ns
Dimensions
Height15.75 mm
Length10.4 mm
Width4.6 mm