供应链
Country of OriginMainland China
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2008-06-18
Lifecycle StatusEOL (Last Updated: 6 days ago)
LTB Date2026-01-01
LTD Date2026-07-01
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 6 days ago)
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描述
由其分销商提供的 onsemi FDP032N08 的描述。
N-Channel PowerTrench® MOSFET 75V, 235A, 3.2mΩ
Trans MOSFET N-CH Si 75V 235A 3-Pin(3+Tab) TO-220 Tube
MOSFET, N CH, 75V, 120A, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 120A; Drain Source Voltage Vds: 75V; On Resistance Rds(on): 0.0025ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.5V; P
N-CHANNEL POWERTRENCH MOSFET Power Field-Effect Transistor, 235A I(D), 75V, 0.0032ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
This N-Channel MOSFET is produced using Fairchild Semiconductor’s PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance.
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageTO-220-3
MountThrough Hole
Number of Pins3
Number of Terminals3
Weight2.421 g
Technical
Continuous Drain Current (ID)120 A
Drain to Source Breakdown Voltage75 V
Drain to Source Resistance3.2 mΩ
Drain to Source Voltage (Vdss)75 V
Element ConfigurationSingle
Fall Time121 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance15.16 nF
Max Junction Temperature (Tj)175 °C
Max Operating Temperature175 °C
Max Power Dissipation375 W
Min Breakdown Voltage75 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation375 W
Rds On Max3.2 mΩ
Resistance3.2 MΩ
Rise Time191 ns
Schedule B8541290080
Threshold Voltage3.5 V
Turn-Off Delay Time335 ns
Turn-On Delay Time230 ns
Dimensions
Height20.4 mm
Length10.1 mm
Width4.7 mm