供应链
Lifecycle StatusProduction (Last Updated: 5 years ago)
Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)
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InfineonIRLML9301TRPBF
Transistor: P-MOSFET; unipolar; -30V; -3.6A; 0.064ohm; 1.3W; -55+150 deg.C; SMD; SOT23
InfineonIRLML2030TRPBF
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
描述
由其分销商提供的 onsemi FDN337N 的描述。
N-Channel Logic-Level Enhancement Mode Field Effect Transistor 30V, 2.2A, 65mΩ
N-Channel 30 V 65 mOhm Surface Mount Field Effect Transistor - SSOT-3
Power MOSFET, N Channel, 30 V, 2.2 A, 0.065 ohm, SuperSOT, Surface Mount
MOSFET; Transistor Type:MOSFET; Transistor Polarity:N Channel; Drain Source Voltage, Vds:30V; Continuous Drain Current, Id:2.2A; On Resistance, Rds(on):0.065ohm; Rds(on) Test Voltage, Vgs:4.5V; Package/Case:SuperSOT-3 ;RoHS Compliant: Yes
Transistor Polarity = N-Channel / Configuration = Single / Continuous Drain Current (Id) A = 2.2 / Drain-Source Voltage (Vds) V = 30 / ON Resistance (Rds(on)) mOhm = 70 / Gate-Source Voltage V = 8 / Fall Time ns = 4 / Rise Time ns = 10 / Turn-OFF Delay Time ns = 17 / Turn-ON Delay Time ns = 4 / Operating Temperature Min. °C = -55 / Operating Temperature Max. °C = 150 / Package Type = SOT-23 / Pins = 3 / Mounting Type = SMD / MSL = Level-1 / Packaging = Tape & Reel / Reflow Temperature Max. °C = 260 / Power Dissipation (Pd) mW = 500
SuperSOT™-3 N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMCIA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.
MOSFET, N, SOT-23; Transistor Type:MOSFET; Transistor Polarity:N; Voltage, Vds Typ:30V; Current, Id Cont:2.5A; Resistance, Rds On:0.052ohm; Voltage, Vgs Rds on Measurement:4.5V; Voltage, Vgs th Typ:0.7V; Case Style:SOT-23; Termination Type:SMD; Current, Idm Pulse:10A; Device Marking:FDN337N; External Depth:2.5mm; External Length / Height:1.12mm; No. of Pins:3; Power Dissipation:0.5W; Power, Pd:0.5W; SMD Marking:337; Temperature, Current:25°C; Temperature, Full Power Rating:25°C; Transistors, No. of:1; Voltage, Vds Max:20V; Width, External:3.05mm; Width, Tape:8mm
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Case/PackageSOT-23-3
Contact PlatingTin
MountSurface Mount
Number of Pins3
Number of Terminals3
Weight30 mg
Technical
Continuous Drain Current (ID)2.2 A
Current Rating2.2 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance65 mΩ
Drain to Source Voltage (Vdss)30 V
Dual Supply Voltage30 V
Element ConfigurationSingle
Fall Time4 ns
Gate to Source Voltage (Vgs)8 V
Input Capacitance300 pF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation500 mW
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs700 mV
Number of Channels1
Number of Elements1
PackagingCut Tape
Power Dissipation500 mW
Rds On Max65 mΩ
Resistance65 mΩ
Rise Time10 ns
Schedule B8541210080
TerminationSMD/SMT
Threshold Voltage700 mV
Turn-Off Delay Time17 ns
Turn-On Delay Time4 ns
Voltage Rating (DC)30 V
Dimensions
Height1.12 mm
Length2.92 mm
Width3.05 mm