由其分销商提供的 Infineon IRLML6346TRPBF 的描述。
MOSFET Transistor, N Channel, 3.4 A, 30 V, 0.046 ohm, 4.5 V, 800 mV
30V Single N-Channel HEXFET Power MOSFET in a Micro 3 package, SOT23-3, RoHS
Infineon SCT
Single N-Channel 30 V 80 mOhm 2.9 nC HEXFET® Power Mosfet - SOT-23
MOSFET N-CH 30V 3.4A SOT23 / Trans MOSFET N-CH 30V 3.4A 3-Pin SOT-23 T/R
Power MOSFET, N Channel, 30 V, 3.4 A, 0.046 ohm, SOT-23, Surface Mount
MOSFET Operating temperature: -55...150 °C Housing type: SOT-23 Polarity: N Power dissipation: 1.3 W
Power Field-Effect Transistor, 3.4A I(D), 30V, 0.063ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB
MOSFET,N CH,30V,3.3A,SOT23; Transistor Polarity:N Channel; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.046ohm; Rds(on) Test Voltage Vgs:4.5V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SOT-23; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:3.4A; Power Dissipation Pd:1.3W; Voltage Vgs Max:12V
The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal for low frequency applications requiring performance and ruggedness. The comprehensive portfolio addresses a broad range of applications including DC motors, battery management systems, inverters, and DC-DC converters.