onsemi NDS355N

N-Channel Logic Level Enhancement Mode Field Effect Transistor 30V, 1.6A, 125mΩ

N-Channel 30 V 0.125 Ohm Logic Level Enhance Mode Field Effect Transistor-SSOT-3

MOSFET, N, SMD, SSOT-3; Transistor Polarity:N Channel; Continuous Drain Current Id:1.6A; Drain Source Voltage Vds:30V; On Resistance Rds(on):125mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.6V; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:SuperSOT; No. of Pins:3; SVHC:No SVHC (15-Dec-2010); Current Id Max:1.6A; Package / Case:SuperSOT-3; Power Dissipation Pd:500mW; Termination Type:SMD; Voltage Vds Typ:30V; Voltage Vgs Max:20V; Voltage Vgs Rds on Measurement:4.5V

These N-Channel logic level enhancement mode power field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage applications in notebook computers, portable phones, PCMICA cards, and other battery powered circuits where fast switching, and low in-line power loss are needed in a very small outline surface mount package.