供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2009-12-10
Lifecycle StatusEOL (Last Updated: 2 days ago)
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 2 days ago)
相关零件
VishaySI4156DY-T1-GE3
Si4156DY Series N-Channel 30 V 0.006 Ohm 6 W Surface Mount Power Mosfet - SOIC-8
InfineonIRFHM8330TRPBF
Single N-Channel 30 V 6.6 mOhm 20 nC HEXFET® Power Mosfet - PQFN 3.3 x 3.3 mm
VishaySI7634BDP-T1-GE3
SI7634BDP Series N-Channel 30 V 0.0054 Ohm Power MosFet SMT - POWERPAK-SO-8
描述
由其分销商提供的 onsemi FDMS7700S 的描述。
Dual N-Channel PowerTrench® MOSFET N-Channel: 30 V, 30 A, 7.5 mΩ N-Channel: 30 V, 40 A, 2.4 mΩ
Transistor MOSFET Array Dual N-CH 30V 30A/40A 8-Pin Power 56 T/R
MOSFET Transistor; Transistor Polarity:Dual N Channel; Continuous Drain Current Id:30A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0075ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1V ;RoHS Compliant: Yes
This device includes two specialized N-Channel MOSFETs in a dua- MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.
MOSFET,NN CH,30V,POWER56; Transistor Polarity:N Channel; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.8V; Power Dissipation Pd:2.5W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 56; No. of Pins:8; SVHC:No SVHC (20-Jun-2011); Current Id Max:22A; Drain Source Voltage Vds:30V; Module Configuration:Dual; On Resistance Rds(on):0.0019ohm; Power Dissipation Pd:2.5W
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals8
Weight211 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance7.5 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationDual
Fall Time6.8 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.75 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation2.5 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Nominal Vgs1.8 V
Number of Channels2
Number of Elements2
Power Dissipation1 W
Rds On Max7.5 mΩ
Resistance7.5 MΩ
Rise Time9.2 ns
Threshold Voltage1 V
Turn-Off Delay Time58 ns
Dimensions
Height800 µm
Length5 mm
Width6 mm