价格与库存
| Distributor | SKU | Min | Pkg | |||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
| Future Electronics | SI7634BDP-T1-GE3 | 6,000 | 3K | Tape & Reel | ||||||||
| DigiKey | SI7634BDP-T1-GE3CT-ND | 654 | 1 | Cut Tape | ||||||||
| TME | SI7634BDP-T1-GE3 | 0 | 3K | 11h | ||||||||
| Newark | SI7634BDP-T1-GE3 | 0 | 3K | Cut Tape | ||||||||
| Avnet | SI7634BDP-T1-GE3 | 0 | 3K | 15h |
供应链
Export Control Classification Number (ECCN) CodeEAR99
Introduction Date2008-03-13
Lifecycle StatusNRND (Last Updated: 4 months ago)
相关零件
描述
由其分销商提供的 Vishay SI7634BDP-T1-GE3 的描述。
SI7634BDP Series N-Channel 30 V 0.0054 Ohm Power MosFet SMT - POWERPAK-SO-8
N-CHANNEL 30-V (D-S) MOSFET Power Field-Effect Transistor, 22.5A I(D), 30V, 0.0054ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
MOSFET, N CH, 30V, 40A, POWERPAK SO; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0058ohm; Rds(on) Test Voltage Vgs:10V; Power Dissipation Pd:48W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:PowerPAK SO; No. of Pins:8; MSL:-
制造商别名
Vishay 在全球拥有多个品牌，分销商可将其用作替代名称。Vishay 也可称为以下名称：
- VIS
- VISH
- VISHAY INTERTECHNOLOGY INC
- Vishay Thin Film
- Vishay Intertechnology
- VISHA
- Vishay Semiconductors
- VISAHY
- Vishay Intertech
- VISHY
- VISHAY INTERTECHNOLOGY ASIA PTE LTD
- Vishay Intertechnologies
- Vishay General Semiconductor - Diodes Division
- Vishay Semiconductor Opto Division
- VSHAY
- VISH/IR
- VSHY
- VSH
- VISHAY INTERTECHNOLOGY ASIA PT
- VISHAY ELECTRONIC
- VISHAY AMERICAS INC
- Vishay Semiconductor Diodes Division
- VISHAY OPTO
- VISHAY FOIL RESISTORS
- Vishay Polytech
- Vishay Semiconductor
- Vishay Sfernice
- Vishay Siliconix
- Vishay Dale
- Vishay BCcomponents
- Vishay Angstrohm
- Vishay Draloric
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight506.605978 mg
Technical
Continuous Drain Current (ID)22.5 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance5.4 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time12 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance3.15 nF
Max Operating Temperature150 °C
Max Power Dissipation48 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
Power Dissipation5 W
Rds On Max5.4 mΩ
Resistance5.4 mΩ
Rise Time12 ns
Schedule B8541290080
Threshold Voltage1.4 V
Turn-Off Delay Time34 ns
Turn-On Delay Time30 ns
Dimensions
Height1.04 mm
Length4.9 mm
Width5.89 mm