onsemi FDMS7602S

Name: onsemi FDMS7602S
Brand: onsemi
SKU: FDMS7602S

2.5W 20V 3V@ 250¦ÌA 28NC@ 10V 2N 30V 7.5M¦¸@ 12A, 10V 12A, 17A 1.75NF@15V Dfn 6MM*5MM*800¦ÌM

$ 0.679

Production

制造商页面数据表

价格与库存

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未经授权的库存分销商

非授权经销商

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Distributor		SKU		Min	Pkg
Avnet	2	FDMS7602S	3,000	1K					0.667	0.635	2d
Verical	2	FDMS7602S	2,000	10			1.041	0.843	0.679	0.679
Arrow Electronics		FDMS7602S	2,000	1		1.300	1.041	0.843	0.679	0.679
Rochester Electronics		FDMS7602S	1,344					0.767	0.636	0.567	1d
DigiKey	3	FDMS7602SCT-ND	6,214	1	Cut Tape	2.260	1.442	0.977	0.713	0.713

数据表和文档

下载 onsemi FDMS7602S 的数据表和制造商文档。

Newark

Datasheet0 页0 年前

Datasheet12 页16 年前

Datasheet0 页0 年前

Upverter

IHS

onsemi

element14 APAC

库存历史记录

3 个月趋势:

-1.62%

CAD 模型

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来源	eCAD	mCAD	文件
EE Concierge	符号封装

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供应链

Country of OriginThailand

Export Control Classification Number (ECCN) CodeEAR99

Harmonized Tariff Schedule (HTS) Code8541.29.00.95

Introduction Date2010-01-22

Lifecycle StatusProduction (Last Updated: 5 years ago)

Manufacturer Lifecycle StatusACTIVE (Last Updated: 5 years ago)

描述

由其分销商提供的 onsemi FDMS7602S 的描述。

2.5W 20V 3V@ 250¦ÌA 28nC@ 10V 2N 30V 7.5m¦¸@ 12A,10V 12A,17A 1.75nF@15V DFN 6mm*5mm*800¦Ìm

Unikeyic (ICkey)

Dual N-Channel PowerTrench® MOSFET 30V, 30A

onsemi

FDMS7602S Series 30 V 12 A/17 A SMT Dual N-Ch PowerTrench® MOSFET - POWER-56

Future Electronics

Trans MOSFET N-CH Si 30V 12A/17A 8-Pin DFN EP T/R

Richardson RFPD

Power Field-Effect Transistor, 12A I(D), 30V, 0.005ohm, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET

IHS

MOSFET N Channel 30V 8 Pin Power 56

RS APAC

DUAL N CH MOSFET, POWERTRENCH, 30V, 30A,; DUAL N CH MOSFET, POWERTRENCH, 30V, 30A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id, N Channel:30A; Drain Source Voltage Vds, N Channel:30V; On Resistance Rds(on), N Channel:0.0075ohm

element14 APAC

This device includes two specialized N-Channel MOSFETs in a dual MLP package.The switch node has been internally connected to enable easy placement and routing of synchronous buck converters. The control MOSFET (Q1) and synchronous SyncFET™ (Q2) have been designed to provide optimal power efficiency.

Fairchild Semiconductor