供应链
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2010-08-13
Lifecycle StatusObsolete (Last Updated: 5 days ago)
Manufacturer Lifecycle StatusOBSOLETE (Last Updated: 5 days ago)
相关零件
描述
由其分销商提供的 onsemi FDMC3020DC 的描述。
N-Channel PowerTrench® MOSFET, Dual CoolTM 33, 30V, 40A, 6.25mΩ
Power Field-Effect Transistor, 17A I(D), 30V, 0.00625ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240BA
3W(Ta)，50W(Tc) 20V 3V@ 250µA 23nC@ 10V 1individualNChannel 30V 6.25mΩ@ 12A,10V 17A，40A 1.385nF@15V QFN SMD mount 3.3mm*3.3mm*1mm
MOSFET, N CH, 30V, 40A, POWER33; Transistor Polarity:N Channel; Continuous Drain Current Id:40A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.005ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:50W; Operating Temperature Range:-55°C to +150°C; Transistor Case Style:Power 33; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)
This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual Cool™ package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON SEMICOND
- ON Semiconductor / Fairchild
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- ON SEMICONDUCTOR CORP
- onsemi / Fairchild
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
Contact PlatingTin
MountSurface Mount
Number of Pins8
Number of Terminals5
Weight32.13 mg
Technical
Continuous Drain Current (ID)17 A
Drain to Source Breakdown Voltage30 V
Drain to Source Resistance6.25 mΩ
Drain to Source Voltage (Vdss)30 V
Element ConfigurationSingle
Fall Time2 ns
Gate to Source Voltage (Vgs)20 V
Input Capacitance1.385 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation50 W
Min Breakdown Voltage30 V
Min Operating Temperature-55 °C
Number of Channels1
Number of Elements1
PackagingTape and Reel
Power Dissipation3 W
Rds On Max6.25 mΩ
Rise Time3 ns
Threshold Voltage1.9 V
Turn-Off Delay Time19 ns
Turn-On Delay Time9 ns
Dimensions
Height1.1 mm
Length3.3 mm
Width3.3 mm