供应链
Country of OriginThailand
Export Control Classification Number (ECCN) CodeEAR99
Harmonized Tariff Schedule (HTS) Code8541.29.00.95
Introduction Date2011-08-12
Lifecycle StatusEOL (Last Updated: 3 days ago)
LTB Date2024-04-06
LTD Date2024-10-06
Manufacturer Lifecycle StatusLAST SHIPMENTS (Last Updated: 3 days ago)
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Power MOSFET, N Channel, 40 V, 49 A, 9.3 mOhm, TDSON, 8 Pins, Surface Mount
描述
由其分销商提供的 onsemi FDMC8030 的描述。
Dual N-Channel Power Trench® MOSFET 40V, 12A, 10mΩ
Dual N-Channel 40 V 1.9 W 30 nC Silicon Surface Mount Mosfet - POWER 33-8
Transistor MOSFET Array Dual N-CH 40V 12A 8-Pin Power 33 T/R
Avnet Japan
onsemi N-Channel MOSFET PowerTrench, Vds=40V, 12A, Power33 Package, SMD, 8-Pin
MOSFET Array, Dual N Channel, 40 V, 12 A, 10 Milliohms, Power 33, 8 Pins
Trans MOSFET N-CH 40V 12A 8-Pin WDFN EP T/R / MOSFET 2N-CH 40V 12A 8MLP
This device includes two 40V N-Channel MOSFETs in a dual Power 33 (3 mm X 3 mm MLP) package. The package is enhanced for exceptional thermal performance.
MOSFET, DUAL N-CH, 40V, 12A, POWER 33-8; Transistor Polarity: Dual N Channel; Continuous Drain Current Id: 12A; Drain Source Voltage Vds: 40V; On Resistance Rds(on; Available until stocks are exhausted Alternative available
制造商别名
onsemi 在全球拥有多个品牌，分销商可将其用作替代名称。onsemi 也可称为以下名称：
- ON Semiconductor
- ONS
- ONSEMICON
- ON SEM
- ON SEMICONDUCTO
- ON SEMICONDUCTORS
- ONSEMIC
- ON Semicondu
- OSC
- ONSE
- ON Semiconductor / Fairchild
- ON SEMICOND
- SCG
- ON Semiconductor Cor
- ON SEMICO
- ONSM
- onsemi / Fairchild
- ON SEMICONDUCTOR CORP
- MOT/ON SEMI
- Fairchild/ONSemiconductor
- ON Semiconductor Corporation
- ON4
- ON Semi - ON Semiconductor
- ON SEMICONDUCT
- ON-SEMI SCG
- ON Semiconductor Inc.
- onsemiconductor
- On Semiconductor Ltd
技术规格
Physical
MountSurface Mount
Number of Pins8
Number of Terminals4
Weight196 mg
Technical
Continuous Drain Current (ID)12 A
Drain to Source Breakdown Voltage40 V
Drain to Source Resistance10 mΩ
Drain to Source Voltage (Vdss)40 V
Element ConfigurationDual
Fall Time3 ns
Gate to Source Voltage (Vgs)12 V
Input Capacitance1.975 nF
Max Junction Temperature (Tj)150 °C
Max Operating Temperature150 °C
Max Power Dissipation1.9 W
Min Breakdown Voltage40 V
Min Operating Temperature-55 °C
Number of Channels2
Number of Elements2
PackagingTape and Reel
Power Dissipation14 W
Rds On Max10 mΩ
Rise Time3 ns
Schedule B8541290080
Threshold Voltage1.5 V
Turn-Off Delay Time19 ns
Turn-On Delay Time7 ns
Dimensions
Height800 µm
Length3 mm
Width3 mm